On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers
Identifieur interne : 000811 ( Main/Repository ); précédent : 000810; suivant : 000812On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers
Auteurs : RBID : Pascal:13-0263241Descripteurs français
- Pascal (Inist)
- Photoluminescence, Photoréflectance, Spectre réflexion, Recuit thermique rapide, Luminescence, Accommodation réseau, Couche épitaxique, Epitaxie jet moléculaire, Composé quaternaire, Effet rayonnement, Irradiation électron, Traitement thermique, GaInNAs, Substrat GaAs, nitroarséniure de gallium et d'indium, gallium indium nitro-arsenide.
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Abstract
The effects of growth temperature (410 and 470 °C) and subsequent rapid thermal annealing (RTA) on luminescence performance of lattice-matched 1-eV GalnNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, has been studied experimentally by 9-K photoluminescence (PL) and 300-K photoreflectance (PR) spectroscopy. The near band edge PL has been found to noticeably decrease and red-shift as the growth temperature (Tgr) is reduced from 470 to 410 °C. This red-shift is the consequence of a reduction in the alloy band gap with decreasing Tgr, as confirmed by PR. An N-related broad PL band, whose intensity remarkably enhances with increasing Tgr, has been detected at longer wavelengths in the 9-K PL's. Post-growth RTA (1 min at 800 °C) significantly enhanced the near band edge PL but it did so at the expense of a PL blue-shift: the more the PL enhancement and blue-shift the lower the Tgr. This annealing-induced blue-shift is due to In-N bonds formation, whose magnitude enhanced as the Tgr is decreased. The broad PL band also enhanced upon the RTA, but the ratio between its intensity and the intensity of the near band edge PL reduced, especially for the sample grown at 410 °C. 7-MeV electron irradiation to the dose of around 1015 cm-2 applied prior to annealing considerably reduced the broad PL band upon annealing.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers</title><author><name sortKey="Pavelescu, E M" uniqKey="Pavelescu E">E.-M. Pavelescu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou lancu Nicolae 126A</s1><s2>077190 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077190 Bucharest</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Exact Sciences and Engineering, Hyperion University, Calea Călăraşilor 169</s1><s2>030615, Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>030615, Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Kudrawiec, R" uniqKey="Kudrawiec R">R. Kudrawiec</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics, University of Technology, Wybrze========zdot;e Wyspiańskiego 27</s1><s2>50-370 Wrocław</s2><s3>POL</s3><sZ>2 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50-370 Wrocław</wicri:noRegion></affiliation></author><author><name sortKey="Dumitrescu, M" uniqKey="Dumitrescu M">M. Dumitrescu</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692</s1><s2>33101 Tampere</s2><s3>FIN</s3><sZ>3 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>33101 Tampere</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0263241</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0263241 INIST</idno><idno type="RBID">Pascal:13-0263241</idno><idno type="wicri:Area/Main/Corpus">000941</idno><idno type="wicri:Area/Main/Repository">000811</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-2313</idno><title level="j" type="abbreviated">J. lumin.</title><title level="j" type="main">Journal of luminescence</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron irradiation</term><term>Epitaxial layers</term><term>Heat treatments</term><term>Luminescence</term><term>Mismatch lattice</term><term>Molecular beam epitaxy</term><term>Photoluminescence</term><term>Photoreflectance</term><term>Quaternary compounds</term><term>Radiation effects</term><term>Rapid thermal annealing</term><term>Reflection spectrum</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Photoréflectance</term><term>Spectre réflexion</term><term>Recuit thermique rapide</term><term>Luminescence</term><term>Accommodation réseau</term><term>Couche épitaxique</term><term>Epitaxie jet moléculaire</term><term>Composé quaternaire</term><term>Effet rayonnement</term><term>Irradiation électron</term><term>Traitement thermique</term><term>GaInNAs</term><term>Substrat GaAs</term><term>nitroarséniure de gallium et d'indium</term><term>gallium indium nitro-arsenide</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effects of growth temperature (410 and 470 °C) and subsequent rapid thermal annealing (RTA) on luminescence performance of lattice-matched 1-eV GalnNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, has been studied experimentally by 9-K photoluminescence (PL) and 300-K photoreflectance (PR) spectroscopy. The near band edge PL has been found to noticeably decrease and red-shift as the growth temperature (T<sub>gr</sub>) is reduced from 470 to 410 °C. This red-shift is the consequence of a reduction in the alloy band gap with decreasing T<sub>gr</sub>, as confirmed by PR. An N-related broad PL band, whose intensity remarkably enhances with increasing T<sub>gr</sub>, has been detected at longer wavelengths in the 9-K PL's. Post-growth RTA (1 min at 800 °C) significantly enhanced the near band edge PL but it did so at the expense of a PL blue-shift: the more the PL enhancement and blue-shift the lower the T<sub>gr</sub>. This annealing-induced blue-shift is due to In-N bonds formation, whose magnitude enhanced as the T<sub>gr</sub> is decreased. The broad PL band also enhanced upon the RTA, but the ratio between its intensity and the intensity of the near band edge PL reduced, especially for the sample grown at 410 °C. 7-MeV electron irradiation to the dose of around 10<sup>15</sup> cm<sup>-2</sup> applied prior to annealing considerably reduced the broad PL band upon annealing.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2313</s0></fA01><fA02 i1="01"><s0>JLUMA8</s0></fA02><fA03 i2="1"><s0>J. lumin.</s0></fA03><fA05><s2>141</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers</s1></fA08><fA11 i1="01" i2="1"><s1>PAVELESCU (E.-M.)</s1></fA11><fA11 i1="02" i2="1"><s1>KUDRAWIEC (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>DUMITRESCU (M.)</s1></fA11><fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou lancu Nicolae 126A</s1><s2>077190 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Faculty of Exact Sciences and Engineering, Hyperion University, Calea Călăraşilor 169</s1><s2>030615, Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Physics, University of Technology, Wybrze========zdot;e Wyspiańskiego 27</s1><s2>50-370 Wrocław</s2><s3>POL</s3><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692</s1><s2>33101 Tampere</s2><s3>FIN</s3><sZ>3 aut.</sZ></fA14><fA20><s1>67-70</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14666</s2><s5>354000503804850130</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0263241</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of luminescence</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The effects of growth temperature (410 and 470 °C) and subsequent rapid thermal annealing (RTA) on luminescence performance of lattice-matched 1-eV GalnNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, has been studied experimentally by 9-K photoluminescence (PL) and 300-K photoreflectance (PR) spectroscopy. The near band edge PL has been found to noticeably decrease and red-shift as the growth temperature (T<sub>gr</sub>) is reduced from 470 to 410 °C. This red-shift is the consequence of a reduction in the alloy band gap with decreasing T<sub>gr</sub>, as confirmed by PR. An N-related broad PL band, whose intensity remarkably enhances with increasing T<sub>gr</sub>, has been detected at longer wavelengths in the 9-K PL's. Post-growth RTA (1 min at 800 °C) significantly enhanced the near band edge PL but it did so at the expense of a PL blue-shift: the more the PL enhancement and blue-shift the lower the T<sub>gr</sub>. This annealing-induced blue-shift is due to In-N bonds formation, whose magnitude enhanced as the T<sub>gr</sub> is decreased. The broad PL band also enhanced upon the RTA, but the ratio between its intensity and the intensity of the near band edge PL reduced, especially for the sample grown at 410 °C. 7-MeV electron irradiation to the dose of around 10<sup>15</sup> cm<sup>-2</sup> applied prior to annealing considerably reduced the broad PL band upon annealing.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A80F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>41</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>41</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Photoréflectance</s0><s5>42</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photoreflectance</s0><s5>42</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>43</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>43</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>43</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Recuit thermique rapide</s0><s5>44</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Rapid thermal annealing</s0><s5>44</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Luminescence</s0><s5>45</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Luminescence</s0><s5>45</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Accommodation réseau</s0><s5>46</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Mismatch lattice</s0><s5>46</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Acomodación red</s0><s5>46</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>61</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>61</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>62</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>62</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Composé quaternaire</s0><s5>63</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Quaternary compounds</s0><s5>63</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>66</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Radiation effects</s0><s5>66</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Irradiation électron</s0><s5>67</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Electron irradiation</s0><s5>67</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Irradiación electrón</s0><s5>67</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>69</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Heat treatments</s0><s5>69</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>GaInNAs</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>nitroarséniure de gallium et d'indium</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>gallium indium nitro-arsenide</s0><s4>INC</s4><s5>86</s5></fC03><fN21><s1>252</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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